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US1M bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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US1M bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() US1A - US1M Document number: DS16008 Rev. 10 - 2 2 of 4 www.diodes.com October 2011 © Diodes Incorporated US1A - US1M Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 4) VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @ TT = 75°CIO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to Terminal RθJT 30 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit Forward Voltage Drop @ IF = 1.0A VFM 1.0 1.3 1.7 V Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage (Note 4) @ TA = 100°C IRM 5.0 100 μA Reverse Recovery Time (Note 5) trr 50 75 ns Typical Total Capacitance (Note 6) CT 20 10 pF Notes: 4. Short duration pulse test used to minimize self-heating effect. 5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 6. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 0 0.5 1.0 25 50 75 100 125 150 T , TERMINAL TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve T ° 0.01 0.1 1.0 10 00.4 0.8 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 1.2 1.6 2.0 US1A - US1D US1G US1J - US1M |
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