UPA1890 datasheet(2/7 Pages) NEC

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Data Sheet G14762EJ1V0DS00

µµµµPA1890

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

A) N-Channel

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain Cut-off Current

IDSS

VDS = 30 V, VGS = 0 V

–10

µA

Gate Leakage Current

IGSS

VGS =

±16 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

1.8

2.5

Forward Transfer Admittance

| yfs |VDS = 10 V, ID = 3.0 A3

7.6

Drain to Source On-state Resistance

RDS(on)1

VGS = 10 V, ID = 3.0 A18

Ω

RDS(on)2

VGS = 4.5 V, ID = 3.0 A24

Ω

RDS(on)3

VGS = 4.0 V, ID = 3.0 A27

Ω

Input Capacitance

Ciss

VDS = 10 V

748

Output Capacitance

Coss

VGS = 0 V

227

Reverse Transfer Capacitance

Crss

f = 1 MHz

107

Turn-on Delay Time

td(on)

VDD = 15 V20

Rise Time

ID = 3.0 A80

Turn-off Delay Time

td(off)

VGS(on) = 10 V48

Fall Time

RG = 10

Ω

Total Gate Charge

VDD = 24 V14

Gate to Source Charge

QGS

ID = 6.0 A1.9

Gate to Drain Charge

QGD

VGS = 10 V3.8

Diode Forward Voltage

VF(S-D)

IF = 6.0 A, VGS = 0 V0.82

Reverse Recovery Time

trr

IF = 6.0 A, VGS = 0 V31

Reverse Recovery Charge

Qrr

di/dt = 100 A /

µs32

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

VGS(on)

10 %

90 %

td(on)

td(off)

10 %

ton

toff

PG.

Ω

D.U.T.

VDD

IG = 2 mA

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