28F008SA-L datasheet(2/28 Pages) INTEL

2 / 28 page

28F008SA-L

PRODUCT OVERVIEW

The 28F008SA-L is a high-performance 8-Mbit

(8388608-bit) memory organized as 1 Mbyte

(1048576 bytes) of 8 bits each Sixteen 64-Kbyte

(65536-byte)

blocks

are

included

the

28F008SA-L A memory map is shown in Figure 6 of

this specification A block erase operation erases

one of the sixteen blocks of memory in typically 20

seconds

independent of the remaining blocks

Each block can be independently erased and written

10000 cycles Erase Suspend

mode allows sys-

tem software to suspend block erase to read data or

execute

code

from

any

other

block

the

28F008SA-L

The 28F008SA-L is available in the 40-lead TSOP

(Thin Small Outline Package 12 mm thick) and 44-

lead PSOP

(Plastic Small Outline) packages Pin-

outs are shown in Figures 2 and 4 of this specifica-

tion

The Command User Interface serves as the inter-

face between the microprocessor or microcontroller

and the internal operation of the 28F008SA-L

Byte Write and Block Erase Automation

allow

byte write and block erase operations to be execut-

ed using a two-write command sequence to the

Command User Interface The internal Write State

Machine

(WSM) automatically executes the algo-

rithms and timings necessary for byte write and

block

erase

operations

including

verifications

thereby unburdening the microprocessor or micro-

controller Writing of memory data is performed in

byte increments typically within 11 ms IPP byte

write and block erase currents

are 10 mA typical

30 mA maximum VPP byte write and block erase

voltage

is 114V to 126V

The Status Register indicates the status of the

WSM and when the WSM successfully completes

the desired byte write or block erase operation

The RYBY

output gives an additional indicator of

WSM activity providing capability for both hardware

signal of status (versus software polling) and status

masking (interrupt masking for background erase

for example) Status polling using RYBY

mini-

mizes both CPU overhead and system power con-

sumption When low RYBY

indicates that the

WSM is performing a block erase or byte write oper-

ation RYBY

high indicates that the WSM is ready

for new commands block erase is suspended or the

device is in deep powerdown mode

Maximum access time is 200 ns (tACC) over the

commercial temperature range (0 Cto a70 C) and

over VCC supply voltage range (30V to 36V and

45V to 55V) ICC active current (CMOS Read) is

5 mA typical

12 mA maximum

at 5 MHz

33V g03V

When the CE

and RP

pins are at VCC the ICC

CMOS Standby

mode is enabled

A Deep Powerdown mode is enabled when the

pin is at GND minimizing power consumption

and providing write protection ICC current in deep

powerdown is 020 mA typical Reset time of 500 ns

is required from RP

switching high until outputs are

valid to read attempts Equivalently the device has a

wake time of 1 ms from RP

high until writes to the

Command User Interface are recognized by the

28F008SA-L With RP

at GND the WSM is reset

and the Status Register is cleared

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