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PA96CE bảng dữ liệu(PDF) 2 Page - List of Unclassifed Manufacturers

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PA96CE bảng dữ liệu(HTML) 2 Page - List of Unclassifed Manufacturers

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PA96
2
PA96U
SPECIFICATIONS
ABSOLUTEMAXIMUMRATINGS
SUPPLY VOLTAGE, +V
S to −VS
300V
OUTPUT CURRENT, continuous
1.5A,
POWER DISSIPATION, internal, DC
70W
INPUT VOLTAGE, common mode
+V
S to −VS
INPUT VOLTAGE, differential
±15V
TEMPERATURE, pin solder, 10s
350°C
TEMPERATURE, junction1
150°C
TEMPERATURE RANGE, storage
−65 to 150°C
OPERATING TEMPERATURE, case
−55 to 125°C
PARAMETER
TEST CONDITIONS2
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE
1
5
mV
OFFSET VOLTAGE vs. temperature
Full temperature range
20
50
µV/°C
OFFSET VOLTAGE vs. supply
20
µV/V
BIAS CURRENT, initial
200
pA
BIAS CURRENT vs. supply
0.1
pA/V
OFFSET CURRENT, initial
50
pA
INPUT RESISTANCE, DC
100
GΩ
INPUT CAPACITANCE
4
pF
COMMON MODE VOLTAGE RANGE3
+V
S − 13
V
COMMON MODE VOLTAGE RANGE3
−V
S + 13
V
COMMON MODE REJECTION, DC
92
dB
NOISE
100KHz bandwidth, 1kΩ R
s
6
µV RMS
GAIN
OPEN LOOP @ 15Hz
R
L= 1kΩ, CC=100pF
96
114
dB
GAIN BANDWIDTH PRODUCT @ 1MHz
VS = 150V, -VS = 150V,
100
175
MHz
A = -100, RF = 100K
PHASE MARGIN
Full temperature range, using
60
°
recommended C
C for gain.
PBW
250V p-p output, 100Ω,
100
KHz
+150V Supplies, Cc = 0pf
OUTPUT
VOLTAGE SWING3
I
O = 1.5A
+V
S − 12
+V
S − 5.6
V
VOLTAGE SWING3
I
O = −1.5A
−V
S + 12
−V
S + 10
V
VOLTAGE SWING3
I
O = 0.1A
+V
S − 8
V
VOLTAGE SWING3
I
O = −0.1A
−V
S + 8
V
CURRENT, continuous, DC
1.5
A
SLEW RATE
A
V = −100, ±150V Supplies, 250Ω load
200
250
V/µS
negative slope, Positiveslope much
faster
SETTLING TIME, to 0.1%
A
V = −100, 1V Step, CC = 0pF
2
µS
RESISTANCE, open loop
DC, 1A Load
7
10
Ω
THERMAL
RESISTANCE, AC Junction to Case4
Full temperature range. f > 60Hz
1.2
1.3
°C/W
RESISTANCE, DC Junction to Case
Full temperature range. f < 60Hz
1.6
1.8
°C/W
RESISTANCE, Junction to Ambient
30
°C/W
TEMPERATURE RANGE, case
Meets full range specifications
-25
85
°C
POWER SUPPLY
VOLTAGE
±15
±100
±150
V
CURRENT, Quiescent total
25
30
35
mA
CURRENT, Quiescent output stage only
10
mA
NOTES: 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate power dissipation to achieve
high MTTF.
2. The power supply voltage specified under typical (TYP) applies unless noted as a test condition.
3. +V
S and –VS denote the positive and negative supply rail respectively. Total VS is measured from +VS to –VS.
4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
CAUTION



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