IDT7130LA55PB datasheet(6/14 Pages) IDT

6 / 14 page

IDT7130SA/LA AND IDT7140SA/LA

HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS

MILITARY AND COMMERCIAL TEMPERATURE RANGES

6.01

AC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(3)

7130X20(2) 7130X25(5)

7130X35

7130X55

7130X100

7140X25

(5)

7140X35

7140X55

7140X100

Symbol

Parameter

Min. Max.

Min. Max. Min.

Max. Min. Max. Min.

Max. Unit

Read Cycle

tRC

Read Cycle Time

—

100

—

tAA

Address Access Time

—

100

tACE

Chip Enable Access Time

—

100

tAOE

Output Enable Access Time

—

tOH

Output Hold From Address Change

—

tLZ

Output Low-Z Time

(1,4)

0—

—

tHZ

Output High-Z Time(1,4)

—

tPU

Chip Enable to Power Up Time

(4)

0—

—

tPD

Chip Disable to Power Down Time

(4)

—

NOTES:

2689 tbl 09

1. Transition is measured

±500mV from Low or High-impedance voltage Output Test Load (Figure 2).

2. Com'l Only, 0

°C to +70°C temperature range. PLCC and TQFP package.

3. “X” in part numbers indicates power rating (SA or LA).

4. This parameter is guaranteed by device characterization, but is not production tested.

5. Not available in DIP packages.

TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1)

ADDRESS

DATAOUT

tRC

tOH

PREVIOUS DATA VALID

tAA

tOH

DATA VALID

2689 drw 08

tBDD (2,3)

BUSYOUT

NOTES:

1. R/

W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition Low.

2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same the

address location. For simultaneous read operations,

BUSY has no relationship to valid output data.

3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.

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