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IDT74FCT299ATPB bảng dữ liệu(PDF) 2 Page - Integrated Device Technology

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Giải thích chi tiết về linh kiện  FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER
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6.11
2
IDT54/74FCT299T/AT/CT
FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
LCC
TOP VIEW
5
6
7
8
S0
OE1
1
2
3
4
20
19
18
17
16
15
14
13
Vcc
P20-1
D20-1
SO20-2
SO20-8
&
E20-1
OE2
I/O6
I/O4
I/O2
GND
S1
DS7
Q7
I/O7
I/O5
I/O
I/O1
I/O0
Q0
MR
9
10
12
11
3
CP
DS0
FUNCTION TABLE
(1)
Inputs
MR
MR S1
S0
CP
Response
L
X
X
X
Asynchronous Reset Q0–Q7 = LOW
HH
H
↑ Parallel Load; I/On → Qn
HL
H
↑ Shift Right; DS0 → Q0, Q0 → Q1, etc.
HH
L
↑ Shift Left; DS7 → Q7, Q7→ Q6, etc.
H
L
L
X
Hold
NOTE:
2632 tbl 02
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
↑ = LOW-to-HIGH clock transition
PIN DESCRIPTION
Pin Names
Description
CP
Clock Pulse Input (Active Edge Rising)
DS0
Serial Data Input for Right Shift
DS7
Serial Data Input for Left Shift
S0, S1
Mode Select Inputs
MR
Asynchronous Master Reset Input (Active LOW)
OE1, OE2
3-State Output Enable Inputs (Active LOW)
I/O0–I/O7
Parallel Data Inputs or 3-State Parallel Outputs
O0, O7
Serial Outputs
2632 tbl 01
Symbol
Parameter(1)
Conditions
Typ.
Max. Unit
CIN
Input
Capacitance
VIN = 0V
6
10
pF
COUT
Output
Capacitance
VOUT = 0V
8
12
pF
2632 lnk 04
NOTE:
1. This parameter is measured at characterization but not tested.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied.
Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
Symbol
Rating
Commercial
Military
Unit
VTERM(2) Terminal Voltage
with Respect to
GND
–0.5 to +7.0
–0.5 to +7.0
V
VTERM(3) Terminal Voltage
with Respect to
GND
–0.5 to
VCC +0.5
–0.5 to
VCC +0.5
V
TA
Operating
Temperature
0 to +70
–55 to +125
°C
TBIAS
Temperature
Under Bias
–55 to +125
–65 to +135
°C
TSTG
Storage
Temperature
–55 to +125
–65 to +150
°C
PT
Power Dissipation
0.5
0.5
W
IOUT
DC Output
Current
–60 to +120
–60 to +120
mA
2632 lnk 03
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE (TA = +25
°C, f = 1.0MHz)
2632 drw 02
DIP/SOIC/QSOP/CERPACK
TOP VIEW
2632 drw 03
4
5
6
7
8
L20-2
18
17
16
15
14
INDEX
I/O6
I/O4
I/O2
I/O0
Q0
DS7
Q7
I/O7
I/O5
I/O3
9 10 11 12 13
32
1
20 19



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