MSF4N65 datasheet(2/6 Pages) BWTECH

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MSF4N65

650V N-Channel MOSFET

Publication Order Number: [MSF4N65]

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

EAR

Repetitive Avalanche Energy

3.6

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Total Power Dissipation (TC=25°C)

Derating Factor above 25 °C

0.26

W/°C

TJ,TSTG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

•Drain current limited by maximum junction temperature

Thermal Characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Max.

Units

RθJC

Junction-to-Case

3.3

°C/W

RθJA

Junction-to-Ambient

62.5

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate Threshold Voltage

VDS = VGS,ID = 250μA

2.0

4.0

RDS(ON)

Static Drain-Source

On-Resistance

VGS = 10 V,ID = 3.0 A

2.0

2.5

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0 V , ID = 250μA

600

710

△BV

DSS

△T

Breakdown Voltage

Temperature Coefficient

ID = 250μA, Referenced to 25°C

0.6

V/°C

IDSS

Zero Gate Voltage Drain

Current

VDS = 600 V , VGS = 0 V

VDS = 480 V , TC = 125°C

μA

IGSSF

Gate-Body Leakage

Current, Forward

VGS = 30 V , VDS = 0 V

100

IGSSR

Gate-Body Leakage

Current, Reverse

VGS = -30 V , VDS = 0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0MHz

545

710

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

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