MS23N22 datasheet(2/5 Pages) BWTECH

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MS23N22

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS23N22]

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RTHJA

Maximum Junction-to-Ambient C/W

a (t <= 5 sec)

150

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

200

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

1.0

1.5

IGSS

Gate-Body Leakage

VDS =0 V , VGS = 8 V

100

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V , VGS = 0 V

VDS = 20 V , VGS = 0 V , TJ= 55°C

ID(on)

On-State Drain Current

VDS = 5 V, VGS = 4.5 V

IDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 2.5 A

VGS = 4.5 V, ID = 1.7 A

102

125

gfs

Forward Tranconductance

VDS = 5 V, ID = 3.0 A

3.5

VSD

Diode Forward Voltage

IS = 0.46 V, VGS = 0 V

0.65

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = 10 V , ID = 2.5 A,

VGS = 4.5 V

3.5

Qgs

Gate-Source Charge

0.8

Qgd

Gate-Drain Charge

1.0

CISS

Input Capacitance

VDS = 15 V , VGS = 0 V

f = 1MHz

720

1500

COSS

Output Capacitance

165

400

CRSS

Reverse Transfer Capacitance

200

td(on)

Turn-On Delay Time

VDD = 10 V , IL = 1 A,

VGEN = 4.5 V , RG =6 Ω

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Notes:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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