MS14P21 datasheet(2/6 Pages) BWTECH

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MS14P21

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS14P21]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A =25°C)

-3.7

Continuous Drain Current

a (T

A =70°C)

-3.0

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

±1.4

Power Dissipation

a (T

A =25°C)

1.56

Power Dissipation

a (T

A =70°C)

0.81

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RTHJA

Maximum Junction-to-Ambient C/W

a (t <= 5 sec)

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

125

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

VDS = VGS, ID=-250 μA

-0.4

IGSS

Gate-Body Leakage

VDS = 0 V , VGS= ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGs = -4.5 V

-5

IDS(on)

Drain-Source On-Resistance

VGS = -4.5 V, ID = -3.7 A

VGS = -2.5 V, ID = -3.1 A

VGS = -1.8 V, ID = -2.6 A

110

160

gfs

Forward Tranconductance

VDS = -5 V, ID = -1.25 A

VSD

Diode Forward Voltage

IS = -0.46 V, VGS = 0 V

-0.65

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