HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6724

Issued Date : 1993.01.13

Revised Date : 2002.01.17

Page No. : 1/3

HTIP32C

HSMC Product Specification

HTIP32C

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP32C is designed for use in general purpose amplifier and

switching applications.

°C)

• Maximum Temperatures

Storage Temperature............................................................................................. -55 ~ +150

°C

Junction Temperature ..................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 40 W

Total Power Dissipation (Ta=25

°C) ....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... -100 V

BVCEO Collector to Emitter Voltage................................................................................. -100 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current.............................................................................................................. -3 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-100

-

-

V

IC=-1mA, IE=0

BVCEO

-100

-

-

V

IC=-30mA, IB=0

ICES

-

-

-200

uA

VCE=-100V

ICEO

-

-

-300

uA

VCE=-60V

IEBO

-

-

-1

mA

VEB=-5V

*VCE(sat)

-

-

-1.2

V

IC=-3A, IB=-375mA

*VBE(on)

-

-

-1.8

V

IC=-3A, VCE=-4V

*hFE1

25

45

-

IC=-1A, VCE=-4V

*hFE2

10

-

50

IC=-3A, VCE=-4V

fT

3

-

-

MHz

IC=-0.5A, VCE=-10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-220