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HTIP117 bảng dữ liệu(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HTIP117 bảng dữ liệu(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 3 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2002.01.18 Page No. : 1/3 HTIP117 HSMC Product Specification HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP117 is designed for use in general purpose amplifier and low- speed switching applications. Absolute Maximum Ratings (Ta=25 °C) • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25 °C)................................................................................................. 50 W Total Power Dissipation (Ta=25 °C)................................................................................................... 2 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ............................................................................................... -100 V BVCEO Collector to Emitter Voltage ............................................................................................ -100 V BVEBO Emitter to Base Voltage ...................................................................................................... -5 V IC Collector Current (Continue)........................................................................................................ -4 A IC Collector Current (Peak).............................................................................................................. -6 A Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -100 - - V IC=-1mA BVCEO -100 - - V IC=-30mA ICBO - - -1 mA VCB=-100V ICEO - - -2 mA VCE=-50V IEBO - - -2 mA VEB=-5V *VCE(sat) - - -2.5 V IC=-2A, IB=-8mA *VBE(on) - - -2.8 V IC=-2A, VCE=-4V *hFE1 1 - - K IC=-1A, VCE=-4V *hFE2 500 - - IC=-2A, VCE=-4V Cob - - 200 pF VCB=-10V, f=0.1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Darlington Schematic R2 R1 C E B TO-220 |
Số phần tương tự - HTIP117 |
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Mô tả tương tự - HTIP117 |
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