HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200203

Issued Date : 2000.08.01

Revised Date : 2002.03.28

Page No. : 1/4

HTIP112

HSMC Product Specification

HTIP112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP112 is designed for use in general purpose amplifier and low-

speed switching applications.

°C)

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................................ +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C)................................................................................................. 50 W

Total Power Dissipation (Ta=25

°C)................................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. 100 V

BVCEO Collector to Emitter Voltage .............................................................................................. 100 V

BVEBO Emitter to Base Voltage ....................................................................................................... 5 V

IC Collector Current (Continue) ......................................................................................................... 4 A

IC Collector Current (Peak)................................................................................................................ 6 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

-

V

IC=1mA

BVCEO

100

-

-

V

IC=30mA

ICBO

-

-

1

mA

VCB=100V

ICEO

-

-

2

mA

VCE=50V

IEBO

-

-

2

mA

VEB=5V

*VCE(sat)

-

-

2.5

V

IC=2A, IB=8mA

*VBE(on)

-

-

2.8

V

IC=2A, VCE=4V

*hFE1

1

-

-

K

IC=1A, VCE=4V

*hFE2

500

-

-

IC=2A, VCE=4V

Cob

-

-

200

pF

VCB=10V, f=0.1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Darlington Schematic

R2

R1

C

E

B

TO-220