HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6319-B

Issued Date : 1996.07.18

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HMPS8599

PNP SILICON TRANSISTOR

Description

HMPS8599 is designed for general purpose amplifier applications.

Features

• Low Collector-Emitter Saturation Voltage

• HMPS8599 is complementary to HMPS8099

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +125

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -80 V

VCES Collector to Emitter Voltage..................................................................................... -80 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ...................................................................................................... -500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

-

-

V

IC=-100uA, IE=0

BVCEO

-80

-

-

V

IC=-10mA, IB=0

BVEBO

-5

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-100

nA

VCB=-80V, IE=0

IEBO

-

-

-100

nA

VEB=-4V, IC=0

ICEO

-

-

-100

nA

VCE=-60V, IB=0

*hFE1

100

-

300

IC=-1mA, VCE=-5V

*hFE2

100

-

-

IC=-10mA, VCE=-5V

*hFE3

75

-

-

IC=-100mA, VCE=-5V

*VCE(sat)1

-

-

-0.4

V

IC=-100mA, IB=-5mA

*VCE(sat)2

-

-

-0.3

V

IC=-100mA, IB=-10mA

VBE(on)

-0.6

-

-0.8

V

IC=-10mA, VCE=-5V

fT

150

-

-

MHz

VCE=-5V, IC=-10mA, f=100MHz

Cob

-

-

8

PF

VCB=-5V, IE=0, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%