HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6326-B

Issued Date : 1992.09.09

Revised Date : 2000.09.20

Page No. : 1/4

HSMC Product Specification

HMPS651

NPN SILICON TRANSISTOR

Description

Amplifier transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 80 V

VCEO Collector to Emitter Voltage ..................................................................................... 60 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current .............................................................................................................. 2 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

-

V

IC=10mA, IB=0

BVCEO

60

-

-

V

IC=100uA, IE=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

0.1

uA

VCB=80V, IE=0

IEBO

-

-

0.1

uA

VEB=4V, IC=0

*VCE(sat)1

-

-

0.5

V

IC=2A, IB=200mA

*VCE(sat)2

-

-

0.3

V

IC=1A, IB=100mA

*VBE(sat)

-

-

1.2

V

IC=1A, IB=100mA

VBE(on)

-

-

1

V

IC=1A, VCE=2V

*hFE1

75

-

-

IC=50mA, VCE=2V

*hFE2

75

-

-

IC=500mA, VCE=2V

*hFE3

75

-

-

IC=1A, VCE=2V

*hFE4

40

-

-

IC=2A, VCE=2V

fT

75

-

-

MHz

IC=50mA, VCE=5V, f=100MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%