HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6327-B

Issued Date : 1992.09.09

Revised Date : 2000.09.20

Page No. : 1/4

HSMC Product Specification

HMPS650

NPN SILICON TRANSISTOR

Description

The HMPS650 is designed for audio transistor.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 60 V

VCEO Collector to Emitter Voltage ..................................................................................... 40 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current .............................................................................................................. 2 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=10mA, IB=0

BVCEO

60

-

-

V

IC=100uA, IE=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=60V, IE=0

IEBO

-

-

100

nA

VEB=4V, IC=0

*VCE(sat)1

-

-

0.5

V

IC=2A, IB=200mA

*VCE(sat)2

-

-

0.3

V

IC=1A, IB=100mA

VBE(on)

-

-

1

V

VCE=2V, IC=1A

*VBE(sat)

-

-

1.2

V

IC=1A, IB=100mA

*hFE1

75

-

-

VCE=2V, IC=50mA

*hFE2

75

-

-

VCE=2V, IC=500mA

*hFE3

75

-

-

VCE=2V, IC=1A

*hFE4

40

-

-

VCE=2V, IC=2A

ft

75

-

-

MHz

VCE=5V, IC=50mA, f=100MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%