HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6811

Issued Date : 1997.12.31

Revised Date : 2002.10.25

Page No. : 1/3

HMBT8599

HSMC Product Specification

HMBT8599

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Amplifier Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -80 V

VCEO Collector to Emitter Voltage..................................................................................... -80 V

VEBO Emitter to Base Voltage ............................................................................................. -5 V

IC Collector Current ...................................................................................................... -500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

-

-

V

IC=-100uA

BVCEO

-80

-

-

V

IC=-10mA

BVEBO

5

-

-

V

IE=-10uA

ICBO

-

-

-100

nA

VCB=-80V

ICEO

-

-

-100

nA

VCE=-60V

IEBO

-

-

-100

nA

VEB=-4V

*VCE(sat)1

-

-

-400

mV

IC=-100mA, IB=-5mA

*VCE(sat)2

-

-

-300

mV

IC=-100mA, IB=-10mA

VBE(on)

-600

-

-800

mV

VCE=-5V, IC=-10mA

*hFE1

100

-

300

VCE=-5V, IC=-1mA

*hFE2

100

-

-

VCE=-5V, IC=-10mA

*hFE3

75

-

-

VCE=-5V, IC=-100mA

fT

150

-

-

MHz

VCE=-5V, IC=-10mA

Cob

-

-

4.5

pF

VCB=-10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23