HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6826

Issued Date : 1993.10.27

Revised Date : 2002.10.25

Page No. : 1/3

HMBT8099

HSMC Product Specification

HMBT8099

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Amplifier Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 80 V

VCEO Collector to Emitter Voltage...................................................................................... 80 V

VEBO Emitter to Base Voltage .............................................................................................. 6 V

IC Collector Current ....................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

-

V

IC=100uA

BVCEO

80

-

-

V

IC=10mA

BVEBO

6

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=80V

ICEO

-

-

100

nA

VCE=60V

IEBO

-

-

100

nA

VEB=6V

*VCE(sat)1

-

-

400

mV

IC=100mA, IB=5mA

*VCE(sat)2

-

-

300

mV

IC=100mA, IB=10mA

VBE(on)

600

-

800

mV

VCE=5V, IC=10mA

*hFE1

100

-

300

VCE=5V, IC=1mA

*hFE2

100

-

-

VCE=5V, IC=10mA

*hFE3

75

-

-

VCE=5V, IC=100mA

fT

150

-

-

VCE=5V, IC=10mA

Cob

-

-

6

pF

VCB=5V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23