HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 2000.07.01

Revised Date : 2000.07.01

Page No. : 1/3

HSMC Product Specification

HM3669

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM3669 is designed for using in power amplifier applications,

power switching application.

°C)

• Maximum Temperatures

Tstg Storage Temperature .................................................................................... -55 ~ +150

°C

Tj Junction Temperature ................................................................................................ +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents

BVCBO Collector to Base Breakdown Voltage ................................................................... 80 V

BVCEO Collector to Emitter Breakdown Voltage ................................................................ 80 V

BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V

IC Collector Current (DC)...................................................................................................... 2 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

-

V

IC=100uA

BVCEO

80

-

-

V

IC=10mA

BVEBO

5

-

-

V

IE=100uA

ICBO

-

-

1000

nA

VCB=80V

IEBO

-

-

1000

nA

VEB=5V

*VCE(sat)

-

0.15

0.5

V

IC=1A, IB=50mA

*VBE(sat)

-

0.9

1.2

V

IC=1A, IB=50mA

*hFE

300

-

-

VCE=2V, IC=500mA

fT

-

100

-

MHz

VCE=2V, IC=500mA

Cob

-

30

-

pF

VCB=10V, f=1MHz

Ton

-

0.2

-

uS

Tstg

-

1

-

uS

Tf

-

0.2

-

uS

IB1=-IB2=50mA, Duty Cycle 1%

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%