DB102G datasheet(1/3 Pages) GENESIC

tên linh kiện	DB102G

Giải thích chi tiết về linh kiện	Silicon Bridge Rectifier

PDF	3 Pages

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nhà sản xuất	GENESIC [GeneSiC Semiconductor, Inc.]

Trang chủ	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 50 V - 400 V

IO = 1 A

Features

• Ideal for printed circuit board

DB Package

• Not ESD Sensitive

Mechanical Data

S

G

• High surge current capability

Case: Molded plastic

Single Phase Glass Passivated

Silicon Bridge Rectifier

• Types from 50 V up to 400 V VRRM

• Reliable low cost construction utilizing molded

plastic technique

Mounting position: Any

Cditi

DB101G thru DB104G

DB104G

DB103G

Maximum ratings at Tc = 25 °C, unless otherwise specified

Polarity: Polarrity symbols marked on the body

• Small size, simple installation

Terminals: Plated terminals, solderable per MIL-STD-

202, Method 208

Parameter

Symbol

DB101G

DB102G

Unit

Repetitive peak reverse voltage

VRRM

50

100

V

RMS reverse voltage

VRMS

35

70

V

DC blocking voltage

VDC

50

100

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

DB101G

DB102G

Unit

Maximum average forward

rectified current

IO

1.0

A

Peak forward surge current

IFSM

30

A

Maximum instantaneous

forward voltage drop

1.1

55

500

Typical junction capacitance

Cj

25

pF

Typical thermal resistance

R

ΘJC

20

°C/W

25

20

VF

5

μA

V

Electrical characteristics at Tc = 25 °C, unless otherwise specified

500

-55 to 150

Conditions

Ta = 25 °C

IF = 1.0 A

Conditions

DB104G

200

140

DB103G

-55 to 150

Maximum DC reverse current at

rated DC blocking voltage

IR

Ta = 125 °C

280

400

200

1.1

DB103G

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

Ta = 40 °C

1.0

tp = 8.3 ms, half sine

30

-55 to 150

DB104G

5

400

www.genesicsemi.com/silicon-products/bridge-rectifiers/

1

Số phần tương tự - DB102G

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Số phần tương tự - DB102G

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