PD20010STR-E datasheet(1/13 Pages) STMICROELECTRONICS

tên linh kiện	PD20010STR-E

Giải thích chi tiết về linh kiện	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	13 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

1 / 13 page

This is information on a product in full production.

May 2012

Doc ID 15514 Rev 2

1/13

13

PD20010-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Datasheet — production data

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC European

directive

Description

The PD20010-E is a common source N-Channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD20010-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD20010-E’s superior linearity performance

makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Packages

Packing

PD20010-E

PowerSO-10RF (formed lead)

Tube

PD20010S-E

PowerSO-10RF (straight lead)

Tube

PD20010TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD20010STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

Số phần tương tự - PD20010STR-E

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nihon Inter Electronics...	PD20012	204Kb / 3P	DIODE MODULE 200A/1200 to 1600V
Nihon Inter Electronics...	PD20012	153Kb / 2P	200A Avg 1200 1600 Volts
STMicroelectronics	PD20015-E	352Kb / 16P	RF power transistor, LdmoST family 29-May-2012
	PD20015C	155Kb / 9P	RF power transistor, LdmoST family 14-Apr-2009
	PD20015S-E	352Kb / 16P	RF power transistor, LdmoST family 29-May-2012

More results

Mô tả tương tự - PD20010STR-E

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	PD55025-E	493Kb / 22P	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 29-Apr-2006
	PD57018-E	560Kb / 28P	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 01-Aug-2007
	PD85035-E	376Kb / 15P	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 16-May-2007
	PD85015-E	251Kb / 13P	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 06-Jul-2009
	PD57060S-E	520Kb / 21P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 03-Jun-2010
	PD57006-E	512Kb / 22P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 25-May-2010
	PD55008L-E	202Kb / 15P	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 16-Jan-2007
	STAP85025S	189Kb / 13P	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 01-Dec-2015
	STAP57045	366Kb / 17P	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 26-Mar-2009
	STAP85025	151Kb / 12P	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs 02-Jul-2009

More results

PD20010STR-E bảng dữ liệu(PDF) 1 Page - STMicroelectronics

PD20010STR-E bảng dữ liệu(HTML) 1 Page - STMicroelectronics

Số phần tương tự - PD20010STR-E

Mô tả tương tự - PD20010STR-E

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

bảng dữ liệu tải về

Link URL