STPSC4H065 datasheet(1/10 Pages) STMICROELECTRONICS

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This is information on a product in full production.

November 2013

DocID023598 Rev 3

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STPSC4H065

650 V power Schottky silicon carbide diode

Datasheet

- production data

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

K

A

K

A

NC

K

A

TO-220AC

STPSC4H065D

DPAK

STPSC4H065B-TR

Table 1. Device summary

Symbol

Value

IF(AV)

4 A

VRRM

650 V

Tj (max)

175 °C

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	STPSC4H065D	322Kb / 14P	650 V, 4 A high surge silicon carbide power Schottky diode 09-Jan-2020
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