VP3203

P-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSS

Drain-to-gate voltage

BV

DGS

Gate-to-source voltage

±20V

Operating and storage temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Device

Package Options

BV

(V)

R

DS(ON)

(max)

(Ω)

I

D(ON)

(min)

(A)

TO-92

TO-243AA (SOT-89)

Die*

VP3203

VP3203N3-G

VP3203N8-G

VP3203ND

-30

0.6

14.0

-G indicates package is RoHS compliant (‘Green’)

* Mil visual screening available.

Pin Configurations

TO-92 (N3)

Product Marking

TO-243AA (SOT-89) (N8)

VP2LW

W = Code for week sealed

= “Green” Packaging

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

►

►

►

►

►

►

►

►

►

►

►

►

►

General Description

The Supertex VP3203 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

GATE

SOURCE

DRAIN

TO-243AA (SOT-89) (N8)

GATE

SOURCE

DRAIN

DRAIN

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiVP

3 2 0 3

Y Y W W

Package may or may not include the following marks: Si or

Packages may or may not include the following marks: Si or