©

1991

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE32484A is a Hetero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for DBS,

TVRO and another commercial systems.

FEATURES

•

Super Low Noise Figure & High Associated Gain

NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz

•

≤ 0.25

µm

•

µm

ORDERING INFORMATION

PART NUMBER

SUPPLYING

LEAD LENGTH

MARKING

FORM

NE32484A-SL

STICK

L = 1.7 mm MIN.

NE32484A-T1

Tape & reel

L = 1.0

± 0.2 mm

1000 pcs./reel

T

NE32484A-T1A

Tape & reel

L = 1.0

± 0.2 mm

5000 pcs./reel

Drain to Source Voltage

4.0

V

Gate to Source Voltage

–3.0

V

Drain Current

mA

Gate Current

100

µA

Total Power Dissipation

165

mW

Channel Temperature

150

˚ C

Storage Temperature

–65 to +150

˚ C

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

23

V

Drain Current

10

20

mA

Input Power

0

dBm

Document No. P11785EJ3V0DS00 (3rd edition)

(Previous No. TC-2316)

Date Published July 1996 P

Printed in Japan

1.78 ±0.2

1

2

L

L

3

4

0.5 TYP.

PACKAGE DIMENSIONS

(Unit: mm)

1.

2.

3.

4.

Source

Drain

Source

Gate

L

L

T