SSFD6046 datasheet(2/4 Pages) SILIKRON

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SSFD6046

Total gate charge

—

7.5

—

Qgs

te-to-Source charg

—

1.2

—

Qgd

te-to-Drain("Miller") charg

—

ID=12A

VDD=30V

VGS=10V

td(on)

Turn-on delay time

—

4.5

—

Rise time

—

3.5

—

©Silikron Semiconductor Corporation

2010.09.01

Version: 1.

page

2of4

Turn

ime

(off)

-Off delay t

—

Fall time

—

ID=

VDD=30V

2A ,RL=2.5Ω

RG=3Ω

GS=10V

Input

nce

450

iss

capacita

—

Coss

Output capacitance

—

Crss

Reve

nce

rse transfer capacita

—

VGS=0V

VDS=30V

f=1.0MHZ

ource-Drain Ratings and Characteristics

Typ.

Max.

Units

Test Conditions

Parameter

Min.

Continu

urrent

ous Source C

(Body Diode)

—

ISM

Puls

rent

—

MOSFET

integral reverse

ed Source Cur

(Body Diode) ①

symbol

showing the

-n junction diode.

VSD

ode Forward Voltag

—

TJ=25ْC,IS=1A,V =0V ③

trr

Reverse Recovery Time

—

Qrr

everse Recovery Charge

—

TJ=25ْC,IF=12A

i/dt=100A/μs ③

ton

Forward Turn-on Time

Intrinsic turn-on time is ne

ble (turn-on is

LD)

gligi

dominated by Ls +

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

Ω Starting TJ = 25°C

②

Test condition: L =0.1mH, VDD = 40V,Id=10A

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25

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