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SW210N04A bảng dữ liệu(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW210N04A bảng dữ liệu(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Feb. 2014. Rev. 1.0 Features ■ High ruggedness ■ R DS(ON) (Max 3.6m Ω)@VGS=10V ■ Gate Charge (Typ 184nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel TO-220 MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 60 V I D Continuous Drain Current (@T C=25 oC) 210* A Continuous Drain Current (@T C=100 oC) 132* A I DM Drain current pulsed (note 1) 840 A V GS Gate to Source Voltage ± 20 V E AS Single pulsed Avalanche Energy (note 2) 2024 mJ E AR Repetitive Avalanche Energy (note 1) 157 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 497 W Derating Factor above 25oC 4.0 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 0.25 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 49.6 oC/W 1/5 *. Drain current is limited by junction temperature. BV DSS : 60V I D : 210A R DS(ON) : 3.6mΩ 1 2 3 SW210N04A SAMWIN Item Sales Type Marking Package Packaging 1 SW P 210N04 SW 210N04A TO-220 TUBE Order Codes 1. Gate 2. Drain 3. Source 1 2 3 TO-220 |
Số phần tương tự - SW210N04A |
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Mô tả tương tự - SW210N04A |
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