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SSF1122 bảng dữ liệu(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

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©Silikron Semiconductor Corporation
2010.12.30
Version:
2.1
page
1of5
SSF1122
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25 ْC Continuous drain current,VGS@10V
60
A
ID@Tc=100ْC Continuous drain current,VGS@10V
50
IDM
Pulsed drain current ①
240
PD@TC=25ْC Power dissipation
1
81
W
Linear derating factor
2.0
W/ ْC
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
240
mJ
EAR
Repetitive avalanche energy
TBD
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +1
75
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-case
—
0.83
—
ْC/W
RθJA
Junction-to-ambient
—
—
62
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
110
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—20
22
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
-
58
—
S
VDS=5V,ID=30A
IDSS
Drain-to-Source leakage current
——
1
μA
VDS=100V,VGS=0V
——
10
VDS=100V, VGS=0V, TJ=150ْC
ID =60A
BV=110V
Rdson=20mΩ(Typ)
Feathers:
Advanced trench process technology
Ultra low Rdson
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF1122 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1122 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF1122 TOP View (TO220)


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