74AHC30 datasheet(7/14 Pages) PHILIPS

7 / 14 page

74AHC_AHCT30_3

Product data sheet

Rev. 03 — 26 June 2009

7 of 14

NXP Semiconductors

74AHC30; 74AHCT30

8-input NAND gate

[1]

Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V).

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of the outputs.

11. Waveforms

CPD

power

dissipation

capacitance

fi = 1 MHz;

VI = GND to VCC

[3]

-10

74AHCT30; VCC = 4.5 V to 5.5 V

tpd

propagation

delay

A, B, C, D, E, F, G, H to Y;

see Figure 6 and 7

[2]

CL = 15 pF

3.3

6.5

1.0

7.5

1.0

8.0

CL = 50 pF

4.7

8.5

1.0

9.5

1.0

10.5

CPD

power

dissipation

capacitance

fi = 1 MHz;

VI = GND to VCC

[3]

-12

Table 7.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.

Symbol Parameter

Conditions

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

Min

Max

Measurement points are given in Table 8.

VOL and VOH are typical voltage output levels that occur with the output load.

Fig 6.

Input to output propagation delays

mna491

tPHL

tPLH

GND

VOH

VOL

A, B, C, D,

E, F, G, H

input

Y output

Table 8.

Measurement points

Type

Input

Output

74AHC30

0.5

× V

0.5

× V

74AHCT30

1.5 V

0.5

× V

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