IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA1N80P

IXTP1N80P

IXTU1N80P

IXTY1N80P

Symbol

Test Conditions

Characteristic Values

(T

Min. Typ.

Max.

g

fs

V

0.30

0.55

S

C

iss

250

pF

C

oss

V

22

pF

C

rss

5.3

pF

t

d(on)

20

ns

t

r

18

ns

t

d(off)

58

ns

t

f

42

ns

Q

g(on)

9.0

nC

Q

gs

V

1.4

nC

Q

gd

5.5

nC

R

thJC

3.0

°C/W

R

thCS

(TO-220)

0.50

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

1 A

I

SM

Repetitive, Pulse Width Limited by T

JM

4 A

V

SD

I

1.3 V

t

rr

700

ns

Note 1: Pulse Test, t

≤ 300μs; Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Resistive Switching Times

V

R

I

V