2SC4463 datasheet(2/7 Pages) HITACHI

2 / 7 page

2SC4463

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

Collector power dissipation

100

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

——V

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

——V

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

——V

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.5

µAV

CB = 10 V, IE = 0

Collector to emitter saturation

voltage

CE(sat)

—

1.0

C = 20 mA, IB = 4 mA

DC current transfer ratio

120

—

CE = 10 V, IC = 10 mA

Gain bandwidth product

600

1000

—

MHz

CE = 10 V, IC = 10 mA

Reverse transfer capacitance

Cre

—

0.35

0.65

CB = 10 V, IE = 0,

emitter common,

f = 1 MHz

Conversion gain

—

CC = 12 V, IC = 2 mA,

f = 200 MHz

Noise figure

—

4.0

—

OSC = 230 Mhz (0 dBm),

out = 30 MHz

Note:

Marking is “HC”.

2SC4463 bảng dữ liệu(PDF) 2 Page - Hitachi Semiconductor

2SC4463 bảng dữ liệu(HTML) 2 Page - Hitachi Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL