2SA715 datasheet(2/5 Pages) HITACHI

2 / 5 page

2SA715

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

–35

—

C = –1 mA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

–35

—

C = –10 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

–5

—

E = –1 mA, IC = 0

Collector cutoff current

CBO

—

–20

µAV

CB = –35 V, IE = 0

DC current transfer ratio

FE*

—

320

CE = –2 V, IC = –0.5 A

—

CE = –2 V, IC = –1.5 A

(Pulse test)

Base to emitter voltage

—

–1.0

–1.5

CE = –2 V, IC = –1.5 A

(Pulse test)

Collector to emitter saturation

voltage

CE(sat)

—

–0.5

–1.0

C = –2 A, IB = –0.2 A

(Pulse test)

Gain bandwidth product

—

160

—

MHz

CE = –2 V, IC = –0.2 A

(Pulse test)

Note:

1. The 2SA715 is grouped by h

FE as follows.

60 to 120

100 to 200

160 to 320

0.8

0.6

0.4

0.2

100

150

200

Maximum Collector Dissipation

Curve

Ambient temperature Ta (

°C)

Area of Safe Operation

–5

–2

–1.0

–0.5

–0.2

–0.1

–1

–2

–5

–10

(–35 V,–0.28 A)

(–4 V,–2.5 A)

–20

–50

Collector to emitter voltage VCE (V)

TC = 25°C

IC max(DC Operation)

2SA715 bảng dữ liệu(PDF) 2 Page - Hitachi Semiconductor

2SA715 bảng dữ liệu(HTML) 2 Page - Hitachi Semiconductor

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL