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L6207Q bảng dữ liệu(PDF) 16 Page - STMicroelectronics

tên linh kiện L6207Q
Giải thích chi tiết về linh kiện  DMOS dual full bridge driver
PDF  27 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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L6207Q bảng dữ liệu(HTML) 16 Page - STMicroelectronics

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Circuit description
L6207Q
16/27
DocID018993 Rev 3
When the monostable times out, the lower power MOSFET is turned on again after some
delay set by the deadtime to prevent cross conduction.
Figure 13. Slow decay mode output stage configurations
5.5
Non-dissipative overcurrent detection and protection
The L6207Q device integrates an overcurrent detection circuit (OCD).
With this internal overcurrent detection, the external current sense resistor normally used
and its associated power dissipation are eliminated. Figure 14 shows a simplified schematic
of the overcurrent detection circuit for bridge A. Bridge B is provided by an analogous circuit.
To implement the overcurrent detection, a sensing element that delivers a small but precise
fraction of the output current is implemented with each high-side power MOSFET. Since this
current is a small fraction of the output current there is very little additional power
dissipation. This current is compared with an internal reference current IREF. When the
output current reaches the detection threshold (typically 5.6 A) the OCD comparator signals
a fault condition. When a fault condition is detected, an internal open drain MOSFET with
a pull-down capability of 4 mA connected to the EN pin is turned on. Figure 15 shows the
OCD operation.
By using an external R-C on the EN pin, as shown in Figure 14, the OFF time before
recovering normal operation can be easily programmed by means of the accurate
thresholds of the logic inputs.
The disable time tDISABLE before recovering normal operation can be easily programmed by
means of the accurate thresholds of the logic inputs. It is affected by both CEN and REN
values and its magnitude is reported in Figure 16. The delay time tDELAY before turning off
the bridge when an overcurrent has been detected depends only on the CEN value. Its
magnitude is reported in Figure 17.
CEN is also used for providing immunity to pin EN against fast transient noises. Therefore
the value of CEN should be chosen as big as possible according to the maximum tolerable
delay time and the REN value should be chosen according to the desired disable time.
The resistor REN should be chosen in the range from 2.2 k to 180 k. Recommended
values for REN and CEN are respectively 100 k and 5.6 nF which allow to obtain 200 µs
disable time.



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