IXTP18N60PM datasheet(2/4 Pages) IXYS

2 / 4 page

IXTP18N60PM

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

OVERMOLDED TO-220

Symbol

Test Conditions

Characteristic Values

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

DS = 20V, ID = 9A, Note 1

iss

2500

oss

GS = 0V, VDS = 25V, f = 1MHz

280

rss

d(on)

d(off)

g(on)

GS = 10V, VDS = 0.5 • VDSS, ID = 9A

thJC

1.39

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

GS = 0V

Repetitive, Pulse Width Limited by T

F = IS, VGS = 0V, Note 1

1.5

500

Resistive Switching Times

GS = 10V, VDS = 0.5 • VDSS, ID = 9A

G = 5Ω (External)

F = IS, VGS = 0V, -di/dt = 100A/μs

R = 100V

Note:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

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