IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 8N50PM

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

5

8

S

C

iss

1050

pF

C

oss

V

120

pF

C

rss

12

pF

t

d(on)

22

ns

t

r

V

28

ns

t

d(off)

R

65

ns

t

f

23

ns

Q

g(on)

20

nC

Q

gs

V

7

nC

Q

gd

7nC

R

thJS

3.0

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

8

A

I

SM

Repetitive

14

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

400

ns

-di/dt = 100 A/

µs

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12 3

ISOLATED TO-220 (IXTP...M)

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered

are derived from data gathered during objective characterizations of preliminary engineer-

ing lots; but also may yet contain some information supplied during a pre-production

design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-

sions without notice.