ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

SYMBOL

MIN.

.MAX.

UNIT

Collector-Emitter Breakdown Voltage

at -IC = 1 mA, IB = 0 mA

-VBR(CEO)

80

–

V

Emitter-Base Breakdown Voltage

at IE = 100 mA, IC = 0

-V(BR)EBO

4.0

–

V

Collector-Emitter Cutoff Current

-VCE = 60 V, -IB = 0

-ICES

–

100

nA

Collector-Base Cutoff Current

-VCB = 80 V, IE = 0

-ICBO

–

100

nA

Collector Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

-VCEsat

–

0.25

V

Base-Emitter On Voltage

at -IC = 100 mA, -IB = 10 mA

-VBE(on)

–

1.2

V

at -IC = 50 mA, -IB = 5 mA

-VBE(on)

–

1.2

V

DC Current Gain

at VCE = 1 V, -IC = 10 mA

hFE

100

–

–

at VCE = 1 V, -IC = 100 mA

hFE

100

–

–

Gain-Bandwidth Product

at VCE = 1 V, IC = 100 mA, f = 100 MHz

fT

50

–

MHz

MMBTA56

0.59 (15)

0.2 (5)

0.03 (0.8)

0.30 (7.5)

0.12 (3)

.04 (1)

0.06 (1.5)

0.20 (5.1)

.08 (2)

.08 (2)

.04 (1)

0.47 (12)