IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH300N04T2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

55

94

S

C

iss

10.7

nF

C

oss

V

1630

pF

C

rss

263

pF

t

d(on)

22

ns

t

r

17

ns

t

d(off)

32

ns

t

f

13

ns

Q

g(on)

145

nC

Q

gs

V

44

nC

Q

gd

36

nC

R

thJC

0.31

°C/W

R

thCH

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

300

A

I

SM

Repetitive, Pulse width limited by T

JM

1000

A

V

SD

I

1.3

V

t

rr

53

ns

I

RM

1.8

A

Q

RM

47.7

nC

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V