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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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ES3B bảng dữ liệu(PDF) 1 Page - General Semiconductor |
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ES3B bảng dữ liệu(HTML) 1 Page - General Semiconductor |
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1 / 2 page  ES3A THRU ES3D SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Built-in strain relief ♦ Ideal for automated placement ♦ Easy pick and place ♦ Superfast recovery time for high efficiency ♦ Glass passivated chip junction ♦ High temperature soldering: 250°C/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AB molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007 ounces, 0.21 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS ES3A ES3B ES3C ES3D UNITS Device marking code EA EB EC ED Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts Maximum RMS voltage VRMS 35 70 105 140 Volts Maximum DC blocking voltage VDC 50 100 150 200 Volts Maximum average forward rectified current at TL=100°C I(AV) 3.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on IFSM 100.0 Amps rated load (JEDEC Method) at TL=100°C Maximum instantaneous forward voltage at 3.0A VF 0.90 Volts Maximum DC reverse current TA=25°C 10.0 at rated DC blocking voltage TA=100°C IR 500.0 µA Maximum reverse recovery time (NOTE 1) trr 20.0 ns Maximum reverse recovery time TJ=25°C 30.0 (NOTE 2) TJ=100°C trr 50.0 ns Maximum stored charge TJ=25°C 15.0 (NOTE 2) TJ=100°C Qrr 35.0 nC Typical junction capacitance (NOTE 3) CJ 45.0 pF Typical thermal resistance (NOTE 4) R ΘJA 47.0 R ΘJL 12.0 °C/W Operating junction and storage temperature range TJ, TSTG -55 to +150 °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) trr and Qrr measured at: VR=30V, di/dt=50A/ µs, IF=3.0A, and Irr=10% IR (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts (4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas 4/98 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.305 (7.75) 0.320 (8.13) 0.260 (6.60) 0.280 (7.11) 0.079 (2.06) 0.103 (2.62) 0.220 (5.59) 0.245 (6.22) 0.126 (3.20) 0.114 (2.90) MAX. DO-214AB Dimensions in inches and (millimeters) |
Số phần tương tự - ES3B |
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Mô tả tương tự - ES3B |
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