BAV19WS datasheet(2/4 Pages) GE

tên linh kiện	BAV19WS

Giải thích chi tiết về linh kiện	SMALL SIGNAL DIODES

PDF	4 Pages

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nhà sản xuất	GE [General Semiconductor]

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2 / 4 page

BAV19WS THRU BAV21WS

ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage at IF = 100 mA

–

1.00

Volts

at IF = 200mA

–

1.25

Volts

Leakage Current

at VR = 100 V

BAV19WS

–

100

at VR = 100 V, Tj = 100 °C

BAV19WS

–

15.0

µA

at VR = 150 V

BAV20WS

–

100

at VR = 150 V, Tj = 100 °C

BAV20WS

–

15.0

µA

at VR = 200 V

BAV21WS

–

100

at VR = 200 V, Tj = 100 °C

BAV21WS

–

15.0

µA

Dynamic Forward Resistance

at IF = 10 mA

–5

–

Ω

Capacitance

at VR = 0, f = 1 MHz

Ctot

–

1.5

–

Reverse Recovery Time

from IF = 30 mA through IR = 30 mA to

trr

–

IR = 3 mA; RL = 100

Ω

Thermal Resistance

Junction to Ambient Air

RthJA

–

6501)

K/W

NOTES:

(1) Valid provided that electrodes are kept at ambient temperature

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