BAS40 datasheet(2/2 Pages) GE

tên linh kiện	BAS40

Giải thích chi tiết về linh kiện	Schottky Diodes

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nhà sản xuất	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified

BAS40 THRU BAS40-06

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

Tested with 10

µA Pulses

V(BR)R

–

Leakage Current

Pulse Test tp < 300 µs

at VR = 30 V

–

100

Forward Voltage

Pulse Test tp < 300 µs

at IF = 1 mA

at IF = 40 mA

–

380

1000

Capacitance

at VR = 0 V, f = 1 MHz

Ctot

–4.0

Reverse Recovery Time

from IF = 10 mA through IR = 10 mA to IR = 1 mA

trr

–

–5ns

Thermal Resistance Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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