BAV99 datasheet(2/2 Pages) GE

tên linh kiện	BAV99

Giải thích chi tiết về linh kiện	Small Signal Diodes

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nhà sản xuất	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified

BAL99, BAV99

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

–

0.715

0.855

1.0

1.25

Leakage Current

at VR = 70 V

at VR = 70 V, Tj = 150 °C

at VR = 25 V, Tj = 150 °C

–

2.5

100

µA

Capacitance

at VF = VR = 0; f = 1 MHz

Ctot

––1.5

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA

measured at IR = 1 mA, RL = 100 Ω

trr

––6

Thermal Resistance

Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout.

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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