FZT489 datasheet(4/7 Pages) DIODES

4 / 7 page

FZT489

Document Number DS33134 Rev. 4 - 2

4 of 7

www.diodes.com

October 2012

A Product Line of

Diodes Incorporated

FZT489

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

−

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

−

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

−

IE = 100µA

Collector Cut-off Current

ICBO

−

100

VCB = 30V

Collector Cut-off Current

ICES

−

100

VCE = 30V

Emitter Cut-off Current

IEBO

−

100

VEB = 4V

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)

−

0.3

0.6

IC = 1A, IB = 100mA

IC = 2A, IB = 200mA

Base-Emitter Saturation Voltage (Note 10)

VBE(sat)

−

1.1

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)

−

1.0

IC = 1A, VCE = 2V

DC Current Gain (Note 10)

hFE

100

−

300

−

IC = 1mA, VCE = 2V

IC = 1A, VCE = 2V

IC = 2A, VCE = 2V

IC = 4A, VCE = 2V

Current Gain-Bandwidth Product (Note 10)

150

−

MHz

VCE = 10V, IC = 50mA

f = 100MHz

Output Capacitance (Note 10)

Cobo

−

VCB = 10V, f = 1MHz

Notes:

10. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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