NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0041B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF6661

/39 ___

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Package

/39 = TO-39

SFF6661/39

0.86 AMP

N-CHANNEL MOSFET

90 Volts, 4Ω

Features:



Rugged construction



Low RDS(on) and high transconductance



Fast recovery and superior dv/dt performance



Increased reverse energy capability



Low input and transfer capacitance for easy

paralleling



Hermetically sealed package



Very fast switching speed



TX, TXV, S-Level screening available

2/



Replacement for 2N6661

Symbol

Value

Units

Drain - Source Voltage

90

V

Gate - Source Voltage

±20

V

Max. Continuous Drain Current

0.86

0.54

A

Max. Instantaneous Drain Current (Tj limited)

3

A

Total Power Dissipation

6.25

0.725

W

Operating & Storage Temperature

-65 to +150

°C

Maximum Thermal Resistance

(Junction to Ambient)

(Junction to Case)

170

20

°C /W

NOTES:

TO-39

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.