NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00087B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF440 ___ ____

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

J = TO-257

SFF440J

8 AMP

N-Channel

Power MOSFET

500 Volts

0.86 Ω

Features:



Rugged construction with polysilicon gate



Low RDS(on) and high transconductance



Excellent high temperature stability



Very fast switching speed



Fast recovery and superior dv/dt performance



Increased reverse energy capability



Low input and transfer capacitance for easy

paralleling



Hermetically sealed package



Low inductance leads



TX, TXV, S-Level screening available



Replaces: IRF440 types

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

500

V

Gate - Source Voltage

±20

V

Max. Continuous Drain Current (package

limited) @ 25ºC

6.9

A

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

2

ºC/W

Total Power Dissipation

63

48

W

NOTES:

TO-257

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration

4/ Unless otherwise specified, all electrical characteristics @25