STPSC8H065 datasheet(1/14 Pages) STMICROELECTRONICS

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This is information on a product in full production.

January 2014

DocID023603 Rev 4

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STPSC8H065

650 V power Schottky silicon carbide diode

Datasheet

− production data

Features

• No reverse recovery charge in application

current range

• Switching behavior independent of

temperature

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V rms

– Typical package capacitance: 7 pF

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

K

A

K

A

NC

K

A

K

A

TO-220AC

STPSC H065D

8

TO-220AC Ins

STPSC H065D

8I

DPAK

STPSC H065B-TR

8

DPAK

2

STPSC H065 -TR

8G

Table 1. Device summary

Symbol

Value

IF(AV)

8 A

VRRM

650 V

Tj (max)

175 °C

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Số phần tương tự - STPSC8H065

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STPSC8H065	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065-Y	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025
	STPSC8H065B-TR	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065BY-TR	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025
	STPSC8H065C	152Kb / 8P	High forward surge capability 07-Nov-2013

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