E-pHEMT MMIC

AE367

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 1.3

0B

Product Features

1B

Applications

• 50 ~ 3500MHz

• GaAs E-pHEMT MMIC

• 0.5W Medium Amplifier

• Higher linearity

• Low Noise Figure

• High Max input power

• SOT-89 SMD Type package

• Higher productivity

• Lower manufacturing cost

• Pb Free / RoHS Standard

• Cellular, GSM

• PCS, DCS, W-CDMA

• Wibro, WiMax, WiFi

• Tetra, CATV, Satellite system

• RFID, Femtocell

• Multi-metering

2B

Description

AE367 is a drive or pre-drive amplifier designed in a low cost SOT-89 package.

This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current and high IP3.

It is designed as driver devices for infrastructure equipment in the 50~3500MHz Wireless technologies such as Cellular, GSM, PCS,

W-CDMA, Wibro, WiMax System.

The data in this spec sheet is valid only for 50 ohm application.

Electrical Specifications

PARAMETER

UNIT

Test Frequency

REMARK

1960MHz

2140MHz

2600MHz

Small Signal Gain

dB

16.2

15.5

14.2

-

Input Return Loss

dB

-15

-15

-15

-

Output Return Loss

dB

-13

-13.5

-17

-

Output IP3*

dBm

39

39

38.5

-

1dB Compression Point

dBm

27

27

27.5

-

Noise Figure

dB

3.5

3.5

3.2

-

WCDMA**

dBm

18.5

18.5

19

@-50dBc ACLR

Efficiency

%

50

50

52

@ P1dB

Supply Voltage/DC Current

V/mA

5/140

-

Note

1. OIP3 measured with 2 tones at an output power of +10dBm/tone separated by 1MHz

2. WCDMA 3G 1FA Test Model1 64DPCH, PAR = 10dB@0.01%

Absolute Maximum Ratings

3B

4B4B

PARAMETER

UNIT

MIN

TYP

MAX

REMARK

Device Voltage

V

-

5

7

-

Operating Case Temperature

℃

-40

-

85

-

Storage Temperature

℃

-40

-

150

-

ESD Human Body Model

-

-

Class 1B

-

-

Moisture Sensitivity Level

-

-

MSL1

-

-

Junction Temperature (Tj)

℃

-

-

180

@ quiescent current,

No RF, Tc = 85℃

Thermal Resistance (Rth)

℃/W

-

62

-

Package Type : SOT-89