ZXGD3006E6 is a Gate Driver capable of driving 10 Amps into an IGBT gate capacitive

load from 40V supply.

4A output from 1mA input

Typically provides a drive current of 4A for an input of 1mA, making it a perfect

high-gain buffer stage between the high output impedance of a controller and the

low input impedance of a IGBT.

40V wide operating voltage

Full enhancement to minimize on-state losses and permits +20V to -18V gate

driving to prevent dV/dt induced false triggering of IGBTs.

Resistant to latch-up and shoot-through issues

Emitter-follower configuration means that the ZXGD3006E6 is inherently resistant

to latch-up and shoot-through issues

Short propagation delay with controlled rise and fall times

Propagation delay <10ns from the emitter-follower configuration can rapidly track

input, whilst separate source and sink outputs allow tailored control of the rise and

fall charging times to minimise the risk of EMI and cross conduction issues.

Reduced parasitic trace inductances

SOT26 device pin-out has been optimised enabling a simplification of PCB layouts

and a reduction in parasitic trace inductances.

AEC-Q101, “Green” and RoHS Compliant

The ZXGD3006E6 is qualified to AEC-Q101 standard, are RoHS compliant and has

insignificant levels of halogens or antimony compounds.

The Diodes’ Advantage

www.diodes.com

Diodes Incorporated has

extended its family of

dedicated Gate Drivers for

the switching of IGBTs and

MOSFETs in, solar

inverters, power supplies

and motor drive circuits.

ZXGD3006E6 is designed

for IGBT gate driving with

a 40V operating range

and delivering upto10

Amp source/sink currents.

The capability of this Gate

Driver also means it

excellent for driving SiC

MOSFETs.

The ZXGD3006E6 can

drive typically 4A into the

low gate impedance of an

IGBT, with just 1mA input

from a controller. Also,

the turn-on and turn-off

switching behavior of the

IGBT can be individually

tailored to suit an

application. In particular,

by defining the switching

characteristics

appropriately, EMI and

cross conduction

problems can be reduced.

In delivering higher pulse

currents than competing

devices, this rugged

SOT26 packaged Gate

Driver ensures heat

dissipation is reduced,

resulting in an increase in

system reliability.

Issue Number | 001

June 2011

New Product

Announcement

High current 40V Gate Driver

reduces IGBT switching losses

High current IGBTs and MOSFETs have relatively large gate capacitances which need to

be charged and discharged during switching. To increase the operational frequency of

the switch, the driving circuit needs to be able to source and sink a large volume of

charge into and out of the gate in a controllable method.

Circuit Function

ZXGD3006E6