BCP52 datasheet(1/4 Pages) CDIL

tên linh kiện	BCP52

Giải thích chi tiết về linh kiện	PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BCP51 BCP52 BCP53

SOT-223

Formed SMD Package

General Purpose Medium Power DC Applications

Complementary BCP54 BCP55 and BCP56

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BCP51

BCP52

Collector Base Voltage

VCBO

45

60

100

Collector Emitter Voltage

VCEO

45

60

80

Emitter Base Voltage

VEBO

Collector Current (DC)

IC

Collector Current Peak

ICM

Base Current Peak

IBM

Power Dissipation upto Tamb=25ºC

*PD

Storage Temperature

Tstg

Junction Temperature

Tj

Operating Ambient Temperature

Tamb

THERMAL RESISTANCE

From junction to ambient

*Rth (j-a)

From junction to soldering point

Rth (j-a)

* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm

2.

ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut Off Current

ICBO

VCB=30V, IE=0

100

nA

VCB=30V, IE=0, Tj=125ºC

10

µA

Emitter Cut Off Current

IEBO

VEB=5V, IC=0

100

nA

DC Current Gain

hFE

IC=5mA, VCE=2V

63

IC=150mA, VCE=2V

63

250

IC=500mA, VCE=2V

40

DC Current Gain

hFE

IC=150mA, VCE=2V

Group -10

63

160

Group -16

100

250

Collector Emitter Saturation Voltage

VCE (sat)

IC=0.5A, IB=50mA

0.5

V

Base Emitter On Voltage

VBE (on)

IC=0.5A, VCE=2V

1.0

V

Transition Frequency

fT

IC=10mA, VCE=5V,f=100MHz

115

MHz

BCP51_53Rev011104E

- 65 to +150

ºC

95

14

K/W

W

ºC

150

0.2

1.3

- 65 to +150

UNITS

V

A

BCP53

5.0

1.0

1.5

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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