FMMT591ATC datasheet(4/7 Pages) DIODES

4 / 7 page

FMMT591A

Document number: DS33105 Rev. 5 - 2

4 of 7

www.diodes.com

December 2013

FMMT591A

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-40

⎯

IC = -100μA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-40

⎯

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

⎯

IE = -100μA

Collector Cutoff Current

ICBO

⎯

-100

VCB = -30V

Collector-Emitter Cutoff Current

ICES

⎯

-100

VCES = -30V

Emitter Cutoff Current

IEBO

⎯

-100

VEB = -5.6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

⎯

-200

-350

-500

IC = -100mA, IB = -1mA

IC = -500mA, IB = -20mA

IC = -1A, IB = -100mA

Base-Emitter Saturation Voltage (Note 9)

VBE(sat)

⎯

-1.1

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(on)

⎯

-1.0

IC = -1A, VCE = -5V

Static Forward Current Transfer Ratio (Note 9)

hFE

300

250

160

⎯

800

⎯

IC = -1mA, VCE = -5V

IC = -100mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

Transition Frequency

150

⎯

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Output Capacitance

Cobo

⎯

VCB = -10V, f = 1MHz

Switching Time

Delay Time

t(d)

⎯

34.9

⎯

VCC = -10V, IC = -500mA,

IB1 = -IB2 =-25mA

Rise Time

t(r)

⎯

19.2

⎯

Storage Time

t(s)

⎯

249

⎯

Fall Time

t(f)

⎯

Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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