IXGC16N60C2 datasheet(2/2 Pages) IXYS

2 / 2 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGC 16N60C2

IXGC 16N60C2D1

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ.

max.

= 12A; V

CE = 10 V,

Note 2.

ies

CE = 25 V, VGE = 0 V, f = 1 MHz

720

oes

16N60C2

16N60C2D1

res

C = 20A, VGE = 15 V, VCE = 0.5 VCES

6nC

d(on)

d(off)

120

100

off

100

µJ

d(on)

16N60C2D1

0.38

d(off)

115

off

150

µJ

thJC

2.0 K/W

thCK

0.25

K/W

Inductive load, T

J = 125°

°°°°C

C = 12A; VGE = 15 V

CE = 400 V; RG = Roff = 22 Ω

Note 1

Inductive load, T

J = 25°

°°°°C

C = 12 A; VGE = 15 V

CE = 400 V; RG = Roff = 22 Ω

Note 1.

Notes:

1. Switching times may increase for V

CE (Clamp) > 0.8 • VCES, higher TJ,

or increased R

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Reverse Diode (FRED)

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

F = 10 A, VGE = 0 V

2.66

J = 125°C

1.66

F = 12 A; -diF/dt = 100 A/µs, VR = 100 V

2.5

GE = 0 V; TJ = 125°C

110

F = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V

thJC

2.5 K/W

ISOPLUS220 Outline

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