LP7512

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 0.6 dB Noise Figure at 12 GHz

♦ 12 dB Associated Gain at 12 GHz

♦ Low DC Power Consumption

♦ Excellent Phase Noise

• DESCRIPTION AND APPLICATIONS

The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances.

The epitaxial structure and processing have been

optimized for ultra low noise and usable gain to 40 GHz.

passivation and is available in a variety of packages.

Typical applications include low noise receiver preamplifiers for commercial applications including

wireless systems and radio link systems.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

15

35

50

mA

Noise Figure

NF

f=18 GHz

0.6

1.0

0.9

1.4

dB

dB

Associated Gain at minimum

NF

f=18 GHz

9

7.5

10

8.5

dB

dB

Transconductance

60

90

mS

Gate-Source Leakage Current

1

10

µA

Gate-Drain Leakage Current

1

10

µA

Pinch-Off Voltage

-0.25

-0.8

-1.5

V

Thermal Resistivity

Θ

JC

325

°C/W

frequency=18 GHz

DRAIN

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

DIE SIZE: 18.0X13.0 mils (460x330

µm)

DIE THICKNESS: 3.9 mils (100

µm)

BONDING PADS: 1.9X1.9 mils (50x50

µm)

GATE

BOND

PAD (2X)