LP3000P100 datasheet(1/3 Pages) FILTRONIC

tên linh kiện	LP3000P100

Giải thích chi tiết về linh kiện	PACKAGED 2W POWER PHEMT

PDF	3 Pages

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nhà sản xuất	FILTRONIC [Filtronic Compound Semiconductors]

Trang chủ	http://www.filtronic.co.uk/

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LP3000P100

PACKAGED 2W POWER PHEMT

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/20/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 33 dBm Output Power at 1-dB Compression at 15 GHz

♦ 8 dB Power Gain at 15 GHz

♦ 60% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a

0.25

µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed

“mushroom” gate structure minimizes parasitic gate-source and gate resistance.

The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP3000 also

features Si3N4 passivation and is available in die form or in other packages.

The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

• ELECTRICAL SPECIFICATIONS @ T

Ambient = 25 °

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

IDSS

VDS = 2 V; VGS = 0 V

800

975

1100

mA

Power at 1-dB Compression

P-1dB

VDS = 8 V; IDS = 50% IDSS

31.5

33

dBm

Power Gain at 1-dB Compression

G-1dB

VDS = 8 V; IDS = 50% IDSS

7

8

dB

Power-Added Efficiency

PAE

VDS = 8 V; IDS = 50% IDSS;

PIN = 17 dBm

45

%

Maximum Drain-Source Current

IMAX

VDS = 2 V; VGS = 1 V

1700

mA

Transconductance

GM

VDS = 2 V; VGS = 0 V

700

900

mS

Gate-Source Leakage Current

IGSO

VGS = -5 V

15

130

µA

Pinch-Off Voltage

VP

VDS = 2 V; IDS = 5 mA

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

|VBDGS|

IGS = 8 mA

-12

-15

V

Gate-Drain Breakdown

Voltage Magnitude

|VBDGD|

IGD = 8 mA

-12

-16

V

frequency=15 GHz

Số phần tương tự - LP3000P100

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Filtronic Compound Semi...	LP3000	44Kb / 2P	2 W POWER PHEMT
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	LP3000SOT89-1	44Kb / 3P	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
	LP3000SOT89-2	44Kb / 3P	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

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Mô tả tương tự - LP3000P100

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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